data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 db151 thru db157 single-p h ase glass passi vated voltage range 50 to 1000 volts current 1.5 am pere fe a t ures good for au toma tion inse rtio n surge ov erload r a ting - 5 0 amper es peak ideal for printed circui t b oard relia ble l o w cost con s tru c tio n u t ili zin g molded glass pa ssiv a ted dev ice polari ty sy mbols molded on body m o u n ting po si tio n : a n y w e i ght: 1.0 gram high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ra ting s a t 25 oc ambient temper atur e unle s s o t herw i se spe c ifie d. single pha se, hal f w a v e , 60 hz, resi stiv e or indu ctiv e load. for capa citiv e lo ad, dera t e curre nt b y 20%. m a xim u m r a t i ngs ( a t t a = 2 5 oc u n less ot h e r w ise noted) ra t i n g s sy m b ol db151 DB152 db153 db154 d b 1 5 5 d b 1 5 6 d b 1 5 7 units m a x i mum recurre n t peak rev e rse v o ltage vrrm 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 volts m a x i mum r m s bri dge i nput vo l t age vrms 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 volts m a x i mum dc blo cking voltage v d c 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 volts m a x i mum a ver age for w a r d output cur r e nt a t t a = 40oc i o 1 . 5 amps peak for w a rd surge current 8.3 m s single ha lf sine- w av e super i mposed on r a ted l o ad (j edec method) i f s m 6 0 amps oper ati ng and sto r age tempe r atur e range tj,tstg -55 to + 150 j electri c a l ch a r a c teri sti c s (a t t a = 25oc unl e ss other w ise note d ) ch a r a c t e r i s t i c s s y m b ol db151 db 152 db153 db154 d b 1 5 5 d b 1 5 6 d b 1 5 7 units m a x i mum for w a rd vol t age dr op pe r b r i dge element at 1. 0 a dc v f 1 . 1 v o l t s @t a = 25oc 5 u a m p s m a x i mum for w a rd vol t age dr op pe r br i dge dc blocking vo lta g e per ele m ent @t a = 125oc ir 0 . 5 m a m p s .335(8.51) .320(8.12) .1 35 (3. 4 ) .1 15 ( 2.9 ) .255(6.5) .245(6.2) .045(1.14) .035(0.89) .205(5.2) .195(5.0) .02 0 0 .5 .1 6 5(4. 2 ) .15 5 (3. 9 ) .0 60 ( 15 ) .350(8.9) .300(7.6) .013(0.33) .0088(0.22) d ip unit:inch(mm)
http://www.yeashin.com 2 rev.02 20120305 db151 thru db157 device characteristics fig.1 der a ting cu r ve for output rectified current fig.3 typical reverse characteristics fig.4 max non-repetitive surge current fig.2 typical fo r w ard characteristics ambient temperature, c o percent of peak reverse voltage, % no.ofcyclesat60hz instantaneous fwd voltage, volts average forward output current, amperes instantaneous reverse current,ua forward surge current, amperes (half sine-wave) instantaneous fwd cuttent, amperes 3.0 2.0 1.0 0 0 50 100 150 1.5 2.5 0.5 t = 100 c a o t=25 c a o 10 1.0 0.1 0.01 0 20 40 60 80 100 120 140 50 40 30 20 10 0 1 2 6 10 20 40 60 100 t=25c pulsewidth=200us j o
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